? 2006 ixys corporation all rights reserved ds99712 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gsm transient 30 v i d25 t c = 25 c 180 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 450 a i ar t c = 25 c25a e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 3.3 ? p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 5.4 6.4 m ? trenchmv tm power mosfet n-channel enhancement mode avalanche rated IXTH180N10T ixtq180n10t v dss = 100 v i d25 = 180 a r ds(on) 6.4 m ? ? ? ? ? to-3p (ixtq) preliminary technical information g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems distributed power architechtures and vrms electronic valve train systems high current switching applications high voltage synchronous recifier
ixys reserves the right to change limits, test conditions, and dimensions. IXTH180N10T ixtq180n10t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 70 110 s c iss 6900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 923 pf c rss 162 pf t d(on) resistive switching times 33 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 54 n s t d(off) r g = 3.3 ? (external) 42 ns t f 31 ns q g(on) 151 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 39 nc q gd 45 nc r thjc 0.31 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 180 a i sm pulse width limited by t jm 450 a v sd i f = 25 a, v gs = 0 v, note 1 0.95 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved IXTH180N10T ixtq180n10t fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 0.2 0.4 0.6 0.8 1 1.2 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 300 01234567 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 90a value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 180a i d = 90a fig. 5. r ds(on) normalized to i d = 90a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. IXTH180N10T ixtq180n10t fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 15 30 45 60 75 90 105 120 135 150 0 25 50 75 100 125 150 175 200 225 250 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 25 50 75 100 125 150 175 200 225 250 275 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - second z (th)jc - oc / w
? 2006 ixys corporation all rights reserved IXTH180N10T ixtq180n10t ixys ref:t_180n10t (61) 11-20-06-a.xls fig. 14. resistive turn-on rise time vs. drain current 10 15 20 25 30 35 40 45 50 55 60 65 70 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanosecond s r g = 3.3 ? v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 4 6 8 101214161820 r g - ohms t r - nanosecond s 30 35 40 45 50 55 60 65 70 75 t d ( o n ) - nanosecond s t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 30 31 32 33 34 35 36 37 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 40 43 46 49 52 55 58 61 64 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v 25a < i d < 50a i d = 25a, 50a fig. 17. resistive turn-off switching times vs. drain current 30 31 32 33 34 35 36 37 38 25 30 35 40 45 50 i d - amperes t f - nanoseconds 40 43 46 49 52 55 58 61 64 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 10 15 20 25 30 35 40 45 50 55 60 65 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 3.3 ? v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 20 40 60 80 100 120 140 160 2 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 40 70 100 130 160 190 220 250 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 25a, 50a 25a < i d < 50a
|
